Fundamental Properties and Device Applications of Ge(x)Si(1-x)/Si Superlattices (Supplemental)

Abstract

The objectives of this contract is to expand the work on the current ONR supported research in the study of Ge(x)Si(1-x)/Si superlattice and quantum well structures into the electromagnetic wave generation and detection applications. The control parameters such as the band offsets as well as the strain induced critical thickness limitation will be investigated. The band-gap engineered superlattices and quantum structures will be designed for tunable frequency detector applications and studied for their strain induced electrical characteristics.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1993
Accession Number
ADA269212

Entities

People

  • Kang L. Wang

Organizations

  • University of California, Los Angeles

Tags

DTIC Thesaurus Topics

  • Band Gaps
  • Contracts
  • Detectors
  • Electrical Engineering
  • Electrical Measurement
  • Energy Bands
  • Engineering
  • Heterojunctions
  • Low Temperature
  • Measurement
  • Military Research
  • Quantum Wells
  • Semiconductors
  • Superlattices
  • Tunnel Diodes
  • Valence
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Technical Research and Report Writing.

Technology Areas

  • Quantum Computing