In-situ Growth Monitoring of Molecular Beam Epitaxy Processes.
Abstract
The strong collaboration between Arizona State University and General Electric Corp. has resulted in a comprehensive program to develop intelligent, in-situ sensors for monitoring and control of semiconductor thin film growth by Molecular Beam Epitaxy (MBE). An intimate collaboration with a commercial MBE manufacturer (DCA Instruments) has resulted in a new ultra-stable substrate manipulator which is compatible with in-situ optical measurements. Another long time collaboration with an ellipsometer manufacturer (Woollam Co.) has generated a new prototype high speed in-situ spectroscopic ellipsometer. Both the manipulator and the ellipsometer have become commercial products. Adaptation of spectroscopic ellipsometry to real time MBE growth monitoring and development of advanced computer algorithms have enabled the tracking of epitaxial layer thickness, temperature and alloy composition. Temperature dependent (from room temperature to 650 deg C) optical constants of GaAs have been measured and verified. Work is continuing on obtaining optical constants for AlGaAs compound semiconductors.... In-situ growth monitoring, MBE
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 03, 1993
- Accession Number
- ADA269287
Entities
People
- George N. Maracas
- Guy R. Sohie
Organizations
- Arizona State University