GaAs Heterojunction Device Based A/D
Abstract
As described in Progress Report No. 12, a yield problem associated with the unintentional formation of a Schottky diode between the base and emitter contact resulting in low V sub be(s) and low gains has been recognized. To eliminate this problem a self-aligned side wall nitride process has been developed that results in nitride being formed around the periphery of the n- ohmic and p-ohmic metal to protect the metal/GaAs interface from attack during the etch of the GaAs cap layer. Initial results obtained with this process are encouraging although it is clear that this approach does not completely eliminate the V sub be problem.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 22, 1988
- Accession Number
- ADA269334
Entities
People
- Max Yoder