RF Vacuum Microelectronics
Abstract
Both masks have been procured and used to fabricate devices. There was no design and procurement activity during this period. Processing of 1.2 was completed in this quarter. One lot of four wafers was processed, two of the wafers in the lot were of sufficient quality to test in vacuum. Test results were mixed, devices operated to higher breakdown potentials but emission current levels were not greatly increased. A number of in-situ gas and plasma exposure measurements were performed. A complete description of the test results is given in section 2.3. The first two wafers of a 4 wafer matrix were completed in this quarter. This experiment was basically designed to test and verify some of the early conclusions. The variables under consideration were: the dielectric thickness at two levels (5000 A and 10,000 A), the thickness of the gate meal (at two levels), and the aperture size of the emitters.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1993
- Accession Number
- ADA269454
Entities
People
- David S. Komm
Organizations
- Hughes Aircraft Company