R and D Status Report: RF Vacuum Microelectronics
Abstract
We summarize our progress towards developing a thin film edge emitter vacuum transistor capable of 1 GHz modulation. Design of the thin film edge emitter vacuum transistors was completed this quarter. The first fabrication run of these devices is presently in progress. In addition, two high frequency probes for a wafer testing of the vacuum transistors were characterized. Vacuum microelectronics, Edge emitter, Thin film technology, Triodes.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 25, 1993
- Accession Number
- ADA269582
Entities
People
- David K. Arch
Organizations
- Honeywell International, Inc.