Scaling Laws for Diamond Chemical Vapor Deposition. 2: Atomic Hydrogen Transport

Abstract

Scaling relations are developed to allow estimation of the atomic hydrogen concentration at the substrate during diamond chemical vapor deposition for both diffusion-dominated and convection-dominated reactors. In the convection-dominated case, it is shown that there exists an optimal Mach number which maximizes the H concentration delivered to the substrate. In addition, when homogeneous recombination is taken into account, there exists an optimal operating pressure. This analysis shows that a sonic flow of highly dissociated hydrogen at a pressure near atmospheric is optimal for rapid growth of high-quality diamond.

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Document Details

Document Type
Technical Report
Publication Date
Sep 15, 1993
Accession Number
ADA269842

Entities

People

  • D. G. Goodwin

Organizations

  • California Institute of Technology

Tags

Communities of Interest

  • Weapons Technologies

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Boundary Layer
  • Chemical Equilibrium
  • Chemical Vapor Deposition
  • Chemistry
  • Convection
  • Diffusion
  • Diffusion Theory
  • Gas Flow
  • Mach Number
  • Materials
  • Mean Free Path
  • Substrates
  • Thermal Conductivity
  • Transport Properties
  • Vapor Deposition
  • Wave Mixing

Fields of Study

  • Physics

Readers

  • Combustion science or combustion engineering.
  • Computational Fluid Dynamics (CFD)
  • Materials Science and Engineering.