RF Vacuum Microelectronics
Abstract
This document reports progress on the following: (1) Stress in evaporated and sputtered moly metalization reduced; (2) Two chips evaluated at moderate current levels (6 devices/chip) and coated with 200 angstroms of silicon and zirconium carbide respectively; (3) High frequency alumina redesigned; and (4) Masks for optical lithography for low resolution steps obtained for increased throughput.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 16, 1993
- Accession Number
- ADA270003
Entities
Organizations
- RTX