Growth, Characterization and Device Development in Monocrystalline Diamond Films
Abstract
A series of computer-based statistical experimental designs have been conducted to determine the optimum conditions for negative bias-enhanced nucleation of diamond. The concentration of CH4 and the effects of pressure and bias voltage on the time for complete coverage of the substrate, film uniformity and nucleation density were the experimental parameters and desired results investigated. Time to complete film formation, uniformity and nucleation density were all improved with the use of both a negative bias voltage and high CH4 concentrations. Diamond has also been formed on diamond seeds placed on nickel substrates via microwave plasma CVD. The long range nucleation density was low and the formation of clusters of diamond more common. Polycrystalline Si-Ge films have been grown by e- beam deposition on naturally occurring p-type semiconducting diamond C(001) substrates. Room temperature and 300 deg C I-V data show the formation of a low-barrier rectifying contacts which exhibit ohmic behavior. Annealing at 850 deg C under UHV conditions resulted in apparent degradation in the I-V characteristics.... Diamond, Statistical design, Deposition experiments, Bias enhanced nucleation, Nucleation density, Si-Ge ohmic contacts
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1993
- Accession Number
- ADA270074
Entities
People
- Robert F Davis
Organizations
- North Carolina State University