Investigation of the Sensitivity, Selectivity, and Reversibility of the Chemically-Sensitive Field-Effect Transistor (CHEMFET) to Detect Nitrogen Dioxide, Dimethyl Methylphosphonate, and Boron Trifluoride
Abstract
This study investigated the sensitivity, selectivity, and reversibility of a chemically-sensitive field-effect transistor (CHEMFET) gas microsensor. Various physical operating parameters were tested to determine which produced the most significant sensitivity, selectivity, and reversibility which were computed from response changes generated from electrical conductivity modulations when exposed to challenge gases. The variable operating parameters included: thinfilm material, film thickness, challenge gas specie, challenge gas concentration, and operating temperature. Copper phthalocyanine and lead phthalocyanine were used as thin films to detect the following challenge gases: nitrogen dioxide, dimethyl methylphosphonate, boron trifluoride, methanol, carbon monoxide, vinyl chloride, and trichloroethylene. Tests revealed that copper phthalocyanine was the most sensitive to dimethyl methylphosphonate and boron trifluoride, whereas lead phthalocyanine was the most sensitive to the remaining challenge gases. The CHEMFET was selective to the binary challenge gas combinations. The films were most selective for nitrogen dioxide. The CHEMFET was fully reversibly, and the time duration for full reversibility increased with increasing challenge gas concentrations and increasing time of exposure.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1993
- Accession Number
- ADA270625
Entities
People
- Neal T. Hauschild
Organizations
- Air Force Institute of Technology