Photoluminescence Spectroscopy of Zinc Germanium Diphosphide (ZnGeP2)
Abstract
Zinc germanium diphosphide (ZnGeP2) is a chalcopyrite semiconductor with strong nonlinear optical properties and potential application to Air Force interests. The characteristics of this material have been studied using photoluminescence (PL) spectroscopy. The PL spectrum is dominated by transitions from the conduction band to a deep acceptor level, and features in the spectrum suggest that more than one transition is being observed. The PL is partially polarized, and the degree of polarization appears to differ for each feature in the spectrum. The relative PL intensity of these features are seen to depend upon the wavelength of the excitation source in a fashion which suggests that the observed transitions may originate from three separate conduction bands. These experimentally observed results are found to agree qualitatively with the published band structure of ZnGeP2.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 13, 1993
- Accession Number
- ADA270705
Entities
People
- Jack E. Mccrae Jr
Organizations
- Air Force Institute of Technology