First Results on InGaAsP Separate Confinement Heterostructure Diode Lasers

Abstract

The first attempts of fabrication of InGaAsP/GaAs SCH-QW laser structures allowed to obtain laser diodes with threshold current densities as low as 47OA/sq cm and differential efficiencies as high as 0.7W/A. Long-cavity (L approx. 1mm) laser diodes have low series resistances of 0.1-0.4ohms. These diodes are suitable for testing of the properties of the Al-free material in continuous wave regime. At the same time, it is evident that further optimization of structure parameters is necessary to reach the ultimate performance expected for InGaAsP SCH QW lasers.

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Document Details

Document Type
Technical Report
Publication Date
Sep 09, 1993
Accession Number
ADA270849

Entities

People

  • M. Razeghi

Organizations

  • Northwestern University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Continuous Waves
  • Current Density
  • Efficiency
  • Electrical Engineering
  • Emission
  • Fabrication
  • Heterojunctions
  • Laser Diodes
  • Lasers
  • Long Wavelengths
  • Materials
  • Quantum Heterostructures
  • Quantum Wells
  • Radiation
  • Resistance
  • Short Wavelengths

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy