Theory of Energy-Assisted Epitaxy; Theory of Ordered Semiconductor Alloys; In1-xTIxSb as a Long-Wave Infrared Material

Abstract

In this report we summarize research by SRI International on the theory of energy-assisted epitaxy and the properties of ordered semiconductor compounds. We include our published papers, and summarize the major conclusions from our work. We also report on our first year of work on the properties of InT1Sb, a proposed new long-wave infrared detector material. We include a discussion of major aspects of our work, including the advantages of this material over HgCdTe and III-V superlattice and quantum-well devices. Epitaxial growth, MBE, ALE, Semiconductor surface, LWIR Materials, InT1Sb.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1993
Accession Number
ADA271007

Entities

People

  • A. Sher
  • M. A. Berding

Organizations

  • SRI International

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Band Theory Of Solids
  • Computational Science
  • Critical Temperature
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Crystal Structure
  • Crystallography
  • Crystals
  • Electronics Laboratories
  • Energy Bands
  • Heat Energy
  • Materials Science
  • Phase Diagrams
  • Solid State Physics
  • Spin-Orbit Interaction
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Academic Conference Management
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Quantum Computing