Ground-State Energies of One- and Two-Electron Silicon Dots in an Amorphous Silicon Dioxide Matrix
Abstract
The one- and two-electron ground-state energies of a silicon sphere embedded in an amorphous silicon dioxide matrix are calculated as a function of the sphere size. The electron-electron interaction and polarization effects are treated by perturbation; our quantum-mechanical, calculation is valid for small spheres with radii between 10 and 40 A. For large spheres, classical electrostatics is used. A universal effective capacitance is defined in terms of the difference in the ground-state energies of the (n + 1)- and n-electron cases, which agrees with the usual concept of capacitance in the classical limit.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 15, 1992
- Accession Number
- ADA271027
Entities
People
- Davorin Babic
- Raphael Tsu
- Richard F. Greene
Organizations
- University of North Carolina at Charlotte