Dynamic and Noise Properties of Tunable Multielectrode Semiconductor Lasers Including Spatial Hole Burning and Nonlinear Gain
Abstract
A general formalism based on the Green's function method is given for multielectrode semiconductor lasers. The effects of both spatial hole burning and nonlinear gain are included in this formalism. An effective nonlinear gain is introduced by taking into account the influence of the laser structure and the associated distribution of the mode intensity along the cavity length. The results obtained for Fabry-Perot and distributed feedback lasers show that the effective nonlinear gain could be considerably enhanced. Affected by the laser structure, the nonlinear gain has a different power dependence than expected from material considerations alone. By including this effective nonlinear gain, the frequency and intensity modulation properties of multielectrode semiconductor lasers are studied. A general linewidth expression is given which includes contributions from spontaneous emission and carrier shot noise. Semiconductor lasers, Spatial hole burning, Linewidth enhancement factor, Optical communications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1993
- Accession Number
- ADA271052
Entities
People
- Govind P. Agrawal
- Guang-hua Duan
- Philippe Gallion
Organizations
- University of Rochester