ALE Project.
Abstract
The general goal of this work is to identify the chemical species that are present at the surface during atomic layer epitaxy (ALE). Particularly interesting is the nature of the passivation layer that terminates the broken bonds at the semiconductor surface in the first ALE step. Likewise, we follow the removal of the passivating species in the second step by thermal decomposition, desorption, irradiation, or chemical reaction. We use mainly surface-sensitive photoelectron spectroscopy at our beam line at the National Synchrotron Light Source (NSLS) in Brookhaven. During the past year we have built a new beam line at the Advanced Light Source (ALS) in Berkeley, which will exhibit 10,000 times higher brightness than NSLS. We expect the ALS beam line to become operational late '93 or early '94.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1993
- Accession Number
- ADA271080
Entities
People
- D. D. Koleske
- D. Lapiano-smith
- F. J. Himpsel
- S. M. Gates
- Subramanian S. Iyer
Organizations
- IBM Thomas J. Watson Research Center