Thresholds of Impact Ionization in Semiconductors

Abstract

We have completed our Monte Carlo approach to impact ionization of electrons in GaAs, InP and InAs and most recently in Ga0.43 In0.57 As. We find that in all these materials the ionization mechanism is quantitatively different to what has been described in previous simplified models, such as Shockley's lucky electron theory. The dependence on die electric field is markedly different in Ga0.43 In0.57 As. With regard to quantum transport, we have investigated the concepts of conductance and capacitance on a general basis and have developed criteria for the additivity of conductance in parallel mesoscopic channels. Semiconductors, Heterostructures, Devices, Electron transport simulation.

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Document Details

Document Type
Technical Report
Publication Date
Oct 15, 1992
Accession Number
ADA271130

Entities

People

  • J. Bude
  • K. Hess

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Conduction Bands
  • Distribution Functions
  • Electric Fields
  • Electron Energy
  • Electrons
  • Energy Bands
  • High Energy
  • Ionization
  • Ions
  • Materials
  • Military Research
  • Monte Carlo Method
  • Scattering
  • Semiconductors
  • Spin-Orbit Interaction

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing