Single Source Precursors for the OMCVD of III/V Compound Semiconductors
Abstract
The overall goals are to develop the fundamental chemistry of group III and group V compounds in several key areas. The underlying rationale is that we may be able to ultimately improve on the preparation and properties of important materials used in the semiconductor industries. The research comprises a collaboration between a synthetic inorganic chemist and a chemical engineer. The three main areas are (1) single source precursors for OMCVD of III/V semiconductors, (2) alternative precursors for OMCVD studies, group III or V hydrides, and (3) the organometallic chemistry of bismuth. The first area will employ compounds of the general type (R2M(mu-R'2E))2 (M=Al, Ga,ln; E=P,As; R, R'=alkyl,aryl,etc.) and the second will employ similar compounds but with R or R' replaced by the hydride ligand. We will explore the relationships between precursor structures, mechanisms of decomposition and thin film formation, and the morphological and electrical properties of the grown films. In the third area we will explore the organometallic chemistry of bismuth and compounds which may serve as precursors to important materials such as InBiSb. OMCVD, Precursors, Thin film formation, Organometallic.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 31, 1993
- Accession Number
- ADA271147
Entities
People
- John G Ekerdt
- Richard A. Jones
Organizations
- University of Texas at Austin