Modeling Failure and Reliability in New-Generation Devices

Abstract

The physics of failure of semiconductor devices, and of the means of simulating it, was studied in order to establish cost-effective methods to design two-and three-terminal semiconductor devices used in amplification, mixing, detection, and oscillation applications. An energy transport simulation code suitable for multi-layered two or three-terminal devices of Si, GaAs, and any other characterizable materials was written and its calculation speed continually enhanced using both physical approximation and numerical sophistication. Results were verified for submicronscale Si MOSFETs with hot- electron reliability problems, and GaAs MESFETs with high-power microwave impingement problems. An effort to theoretically describe electron transport in hexagonal SiC and related crystals were also begun.

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Document Details

Document Type
Technical Report
Publication Date
Jul 31, 1993
Accession Number
ADA271150

Entities

People

  • Jeffrey Frey

Organizations

  • University of Maryland

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electronics
  • Electrons
  • Failure Mode And Effect Analysis
  • High Power Microwaves
  • Integrated Circuits
  • Materials
  • Microwave Integrated Circuits
  • Microwaves
  • Monte Carlo Method
  • Power Electronics
  • Radiation
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Simulations
  • Solid State Electronics

Fields of Study

  • Engineering

Readers

  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Systems Analysis and Design

Technology Areas

  • Directed Energy
  • Microelectronics