Isolation Mechanisms in III-V Devices
Abstract
This is the final technical report for ARO contract DAAL03-89-K-0038. In the report we describe our progress in the areas of III-V electronic device isolation and how they apply to the phenomena of sidegating and backgating in GaAs based devices. The program evolved into a highly collaborative effort between industry and university with several joint publications resulting. The sidegating/backgating problem in field effect transistors (FETs) has essentially been eliminated by the development of GaAs and other compounds grown at low temperatures by MBE. Research included the developing techniques for synthesis of MBE material at low temperatures (LT), establishment of electrical and optical characterization techniques specifically designed for the study of such materials and the effect of electrical buffer layers made from the LT material on devices. We have made advances in several areas including first realizations of LT GaAs by GSMBE, first realization of LT InP, observation of variable range hopping conductivity in various LT III-V materials, determination of device degradation effects of LT buffer layers and thermal stability of these materials. Additionally we (with MOTOROLA) obtained an enhancement of mobility in two dimensional electron gas structures by separately confining electrons and phonons.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 17, 1993
- Accession Number
- ADA271197
Entities
People
- George N. Maracas
Organizations
- Arizona State University