Nanofabrication by Focused Ion Beam
Abstract
Nanometer scale patterning is one of the keys to advances in electronic devices. At present most patterning is done by a multistep lithography process: resist is exposed and developed and the uncovered surface is altered. The focused ion beam may offer simplification of this multistep process. A surface film may be made to grow or dissolve where it has been irradiated. This can be viewed as a new (inorganic) resist process, but in some cases the patterned film may be the desired final structure on the substrate. The problem is that, although examples of such ion sensitive films have been found, they suffer from some drawback such as low sensitivity, or poor resolution. One of the aims of the work was to seek new and useful processes and materials. Another direct pattering technique, more ideally suited for ion beams, is direct maskless implantation of dopants in semiconductors. One of the limits of resolution of this technique is the lateral straggle of ions as they penetrate into the substrate. This has important bearing on the ability to fabricate the confined carrier structures in semiconductors needed in the study of quantum effect devices. The other object of the work was to characterize this straggle and to apply focused ion beam implantation to the fabrication of confined carrier structures, in particular the in-plane-gate field effect transistor. The final report provides a summary of the most important results. Nanofabrication, Focused ion beams, Ion sensitive films, Semiconductors, Quantum effect devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 28, 1993
- Accession Number
- ADA271290
Entities
People
- Dimitri A Antoniadis
- John Melngailis
Organizations
- Massachusetts Institute of Technology