N-P-(P(+)-N(+))-N Al(y)Ga(1-y)As-GaAs-In(x)Ga(1-x)As Quantum Well Laser with p(+)-n(+)GaAs-InGaAs Tunnel Contact on n GaAs,
Abstract
Data are presented on the growth, by metalorganic chemical vapor deposition, and fabrication of n-p (n-up) AlGaAs-GaAs-InGaAs quantum-well heterostructure lasers using a p+-n+ GaAs-InGaAs reverse-biased tunnel junction to contact the n-type GaAs substrate. The lasers operate continuously at 300 K with a threshold of approx. 37 mA for a 10-micrometer-wide native-oxide-defined gain-guided stripe (cavity length approx. 375 micrometers). Comparison tunnel junctions similar to those used in the diode lasers are also fabricated and exhibit low reverse-biased series resistances ( approx. 2.2 ohms, area approx. 4.5 X larger). Quantum-well lasers, Tunnel-junction contact, Carbon doping, III-V Native oxides
Document Details
- Document Type
- Technical Report
- Publication Date
- May 17, 1993
- Accession Number
- ADA271292
Entities
People
- A. R. Sugg
- E. I. Chen
- N. Holonyak Jr.
- S. A. Maranowski
- T. A. Richard
Organizations
- University of Illinois Urbana–Champaign