Novel, Organic Acid-Based Etchants for InGaAlAs/InP Heterostructure Devices with AlAs Etch-Stop Layers
Abstract
Several organic acids have been identified that enable the etching of indium compounds, while maintaining selectivity with respect to AlAs, and these acids have been used to develop InGaAlAs etching solutions that allow the selective etching of InP lattice-matched InGaAlAs heterostructures using thin pseudomorphic AlAs layers as etch stops. Of the organic acids tested, the nonaromatic, polycarboxylic acids have been found to be most effective, and some of the best results have been obtained for etchants consisting of succinic acid, ammonia, and hydrogen peroxide. It is found that the etch rate of In0.53Ga0.47 As with this solution can be as much as 1000 times the etch rate of AlAs, while the etch rate of In0.52AI0.48As can be as much as 500 times that of the AlAs. Etchants, Heterostructures, Device technology indium phosphide.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1992
- Accession Number
- ADA271312
Entities
People
- Clifton G. Fonstaf
- Tom P. Broekaert
Organizations
- Massachusetts Institute of Technology