Femtosecond Gain Dynamics in InGaAs/AlGaAs Strained-Layer Single- Quantum-Well Diode Lasers

Abstract

We report the first investigation of femtosecond gain dynamics in InGaAs/AlGaAs strained-layer single-quantum-well diode lasers using a multiple- wavelength pump probe technique. Studies demonstrate that carrier temperature changes from free-carrier absorption and stimulated transitions strongly govern transient gain dynamics. The energy of the pump wavelength relative to the transparency point determines which processes dominate the transient response. Stimulated carrier cooling is observed for the first time in these materials.

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Document Details

Document Type
Technical Report
Publication Date
Jul 05, 1993
Accession Number
ADA271728

Entities

People

  • C. A. Wang
  • C. K. Sun
  • H. K. Choi
  • J. G. Fujimoto

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Absorption
  • Abstracts
  • Amplifiers
  • Band Gaps
  • Climate Change
  • Dynamics
  • Electronics
  • Energy Bands
  • Femtosecond Time
  • Laser Diodes
  • Lasers
  • Materials
  • Military Research
  • Quantum Wells
  • Transitions
  • Transparencies

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Quantum Computing