Field-Emitter Arrays for RF Vacuum Microelectronics
Abstract
SRI International has completed the eighth quarter of a program to develop field-emitter arrays for vacuum microelectronics. We have met the first- phase program goals of 5 mA total emission, with a current density of 5 A/sq. cm for at least 2 hours and demonstrated modulation of the emission current at a frequency of 1 GHz. A two-step reactive-ion-etch process was established to eliminate an earlier problem with sulfur contamination during low-capacitance cathode fabrication. An electrode designed to shield the emission area from the fringing electrostatic field caused by the proximity of the base electrode in the low-capacitance configuration was fabricated and tested. Measurements continued on one of four cathodes set up for test in a high-frequency apparatus.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 20, 1993
- Accession Number
- ADA271780
Entities
People
- C. A. Spindt
- C.E. Holland
- P. R. Schwoebel
Organizations
- SRI International