RF Vacuum Microelectronics

Abstract

We summarize our technical progress towards developing a thin-film edge emitter vacuum transistor capable of 1 GHz modulation. The first fabrication run of redesigned VME devices was completed. Analysis of this run shows poor step average of the metal runners interconnecting the emitters. This was a result of trying to take advantage of existing processing steps to form the interconnects. Design modifications subsequently were made to the masks and process to eliminate this problem and a second fabrication run has started. Using GaAs devices, we verified our ability to measure devices at 2 GHz with our vacuum test station.

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Document Details

Document Type
Technical Report
Publication Date
Oct 21, 1993
Accession Number
ADA271805

Entities

People

  • D. K. Arch

Organizations

  • Honeywell International, Inc.

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Assembly
  • Contracts
  • Emitters
  • Fabrication
  • Film Resistors
  • Films
  • Frequency
  • Manufacturing
  • Microelectronics
  • Micromachining
  • Microwaves
  • Modulation
  • Technical Information Centers
  • Thin Films
  • Transistors
  • Vacuum

Fields of Study

  • Physics

Readers

  • Combustion and Flow Dynamics.
  • Integrated Circuit Design and Technology.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems