International Symposium on Atomic Layer Epitaxy (2nd) Held in Raleigh, North Carolina on June 2-5, 1992. Program.

Abstract

Partial Contents: Cost Effective Processing By ALE; Molecular Layer Epitaxy of GaAs; Mechanisms of Atomic Layer Epitaxy of GaAs; The Mechanisms and Kinetics of Surface Reactions in Atomic Layer Epitaxy of GaAs Using Trimethygallium; The Surface Chemistry and Kinetics of GaAs Atomic Layer Epitaxy; Real-Time Optical Diagnostics for Measuring and Controlling Epitaxial Growth; In Situ Monitoring and Controlling of Atomic Layer Epitaxy by Surface Photo-Absorption; Surface Photo-Absorption (SPA) Study of the Laser-Assisted Atomic Layer Epitaxial Growth Process of Gallium Arsenide; In Situ Optical Characterization of GaAs and InP Surfaces in Chloride Atomic Layer Epitaxy.

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1992
Accession Number
ADA271990

Entities

Organizations

  • American Vacuum Society

Tags

DTIC Thesaurus Topics

  • Absorption
  • Atomic Layer Epitaxy
  • Chemical Compounds
  • Chemistry
  • Epitaxial Growth
  • Gallium Arsenides
  • Kinetics
  • Materials Science
  • North Carolina
  • Surface Chemistry
  • Surface Reactions

Fields of Study

  • Materials science

Readers

  • Academic Conference Management
  • Electrochemical Engineering/ Fuel Cell Technologies
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene