Direct Images of Thermal Disorder in the Cl-Si and H-O-Si Chemisorption Bond on Si(100)
Abstract
The electron stimulated desorption ion angular distribution (ESDIAD) technique combined with a digital subtraction method have been employed to generate difference ESDIAD patterns between measurements made at 13 OK and 305K for both adsorbed Cl and OH on Si(100). The difference ESDIAD patterns reveal, in real space, images of the thermally excited vibrational amplitudes of the adsorbates. This permits a qualitative visualization of the potential energy surface associated with an adsorbate on its adsorption site. For Cl/Si(100), isotropic thermal broadening of the Cl+-beams from 130K to 305K is observed. In contrast OH/Si(100) exhibits anisotropic thermal broadening of the H+-beams on heating from 130K to 305K. These results are correlated with the vibrational frequencies of the surface oscillators.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 27, 1993
- Accession Number
- ADA272386
Entities
People
- C. C. Cheng
- J. T. Yates Jr.
- Qing Gao
- Wolfgang J. Wolfgang J. Choyke
- Z. Dohnalek
Organizations
- University of Pittsburgh