Development of Ultra-Low Noise, High Performance III-V Quantum Well Infrared Photodetectors (QWIPs) for Focal Plane Array Staring Image Sensor Systems
Abstract
During this reporting period (08-01-93 to 10-31-93) we have continued to make significant progress towards the program goals. We have made a major breakthrough in the development of a new normal incidence p-type strained-layer InGaAs/InAlAs QWIP grown on InP by MBE, which achieved an ultra-low dark current and very high detectivity at 8.1 urn and 77 K. The detector is under background limited performance (BLIP) for T<100 K, which is the highest BLIP temperature ever reported for a QWIP. A dark current density of 7x10(exp -8) A/cm2 and BLIP detectivity of 5.9x10(exp 10) Jones were obtained for this QWIP at 77 K. Other tasks performed during this period include: (i) Design and fabrication of a new two-color stacked BTM and BTC QWIP for 3-5 and 8-12 um IR detection, (ii) design and growth of a normal incidence p-type strained -layer InGaAs/GaAs QWIP grown on GaAs by MBE, and (iii) theoretical and experimental studies of a two- dimensional (2- D) circular mesh grating coupler for GaAs QWIP for enhancing the coupling quantum efficiency and responsivity under normal incidence illumination. Detailed results and accomplishments are described in this report. GaAs/GaAlAs Quantum well infrared photodetectors (QWIPs), p-type strained-layer InGaAs/InAlAs QWIP, intersubband absorption, dark current, responsivity, detectivity, 2-D circular mesh metal grating coupler.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1993
- Accession Number
- ADA272675
Entities
People
- Shengsan Li
Organizations
- University of Florida