Growth, Characterization and Device Development in Monocrystalline Diamond Films
Abstract
For the heteroepitaxial deposition of diamond films, material selection criteria have been used to choose the closely lattice parameter matched substrate of Cu and the subsequent candidate interlayer materials of Ni, Si and Ti, the latter of which hold promise for both pseudomorphic matching to Cu and the promotion of the high density nucleation of diamond. Initial experiments of the Cu/Ti system have shown that a 20 A Ti layer can improve the particle density on Cu by nearly a factor of 10. Copper films have been evaporated under UHV conditions for examination as rectifying contacts. Atomic force microscopy indicated island growth of the Cu. Current-voltage measurements and UPS at 293 K revealed rectifying characteristics and a phi = or approx. 1.1 eV, respectively. In research regarding the negative electron affinity of the 2x1 diamond (100) surface, theoretical calculations indicate that it is associated with a monohydride terminated surface. Diamond, Nucleation, Heteroepitaxial growth, Cu substrates, Pseudomorphic interlayers, Cu rectifying contacts, Atomic force microscopy, Negative electron affinity, Monohydride terminated surface
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1993
- Accession Number
- ADA272715
Entities
People
- Jeffrey T Glass
- Robert F Davis
- Robert J. Nemanich
Organizations
- North Carolina State University