Alumoxanes: Rationalization of Black Box Materials

Abstract

Amorphous (Al203)x(SiO2)y thin films have been grown by atmospheric pressure metal-organic chemical vapor deposition using the single source precursor Al(OSiEt3)32. Characterization by X-ray photoelectron spectroscopy indicated that the films consisted of a mixture of Al2O3, SiO2 and an aluminosilicate. The relative amount of each species was dependent on the deposition temperature and the carrier gas composition. Use of NH3 as the carrier gas resulted in the increased volatility of the precursor by the in situ formation of the low melting Lewis acid-base adduct A1(OSiEt3)3(NH3), however, no nitrogen incorporation was observed in these deposited films.

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Document Details

Document Type
Technical Report
Publication Date
May 18, 1993
Accession Number
ADA272805

Entities

People

  • Andrew R. Barron

Organizations

  • Harvard University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Acids
  • Catalysts
  • Chemical Reactions
  • Chemical Vapor Deposition
  • Chemistry
  • Films
  • Hydrolysis
  • Lewis Acids
  • Mass Spectrometry
  • Materials
  • Materials Science
  • Military Research
  • Minority Groups
  • Physical Properties
  • Spectroscopy
  • United States
  • X Rays

Readers

  • Materials Science and Engineering.
  • Organic Chemistry
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene