Single Crystal Diamond Thin Films.
Abstract
The objective of this program is to employ variations of high temperature ion implantation-outdiffusion processing to promote heteroepitaxial nucleation of diamond on a foreign substrate. The program has involved development of ion implantation apparatus with specialized capabilities. The apparatus has been utilized to investigate effects produced by a range of carbon implantation into copper process variations. Effects of other ions such as hydrogen, oxygen and fluorine in addition to carbon have been investigated. Diamond, Copper, Carbon, Ion implantation, Nucleation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1993
- Accession Number
- ADA272830
Entities
People
- Allen Kirkpatrick