Properties of E-beam Interactive Oxide Films for Nanometer Scale Structures
Abstract
E-beam generated ultrastructures on oxide film substrates have been investigated for high density memory and lithographic applications. In order to create the nanometer scale patterns (holes, lines, channels), a dedicated STEM have been used and also used for exposure studies, imaging, microdiffraction analysis and monitoring the transmitted beam studies. Amorphous films of A1203, Y203, SC203, 3Al2O3-2SiO2, and MgO.Al2O3 are deposited on to substrate at cryogenic temperature. Amorphous film structure is necessary to achieve rapid removal of material during e-beam exposure. Hole resolution in the sputtered oxide films of 5 nm holes on 8.1 nm centers was achieved with exposure times in the millisecond range, 2 - 3 orders of magnitude lower than produced by other technique. Deposition parameters and film thickness have been studied. The gas ambient on thin films electron dose are strongly related to the drilling speed. A possible mechanism for the exposure process is also developed. Lithography, Nanostructure, Oxide, E-beam, Memory.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 05, 1993
- Accession Number
- ADA272848
Entities
People
- B. Kim
- J. L. Hollenbeck
- R. C. Buchanan
Organizations
- University of Illinois Urbana–Champaign