Synthesis and Properties of Mismatched Heterojunction/Substrate Interfaces.
Abstract
This report describes work performed at the University of California, San Diego, on the synthesis and characterization of molecular beam epitaxially-grown heterostructures of In(x)Ga(l-x)As and In(y)Al(1-y)As grown on GaAs substrates using a compositionally step-graded buffer layer which relaxes the mismatch strain between them by more than 90%. The electrical and the galvanomagnetic properties of the two dimensional electron gas produced by modulation doping in such heterojunctions are related to the strain relaxation of the buffer, the impurity doping density, alloy scattering as a function of composition and dislocation scattering at the heterojunction interfaces. III-V Compound heterojunctions, Strain-relaxation at interfaces, Quantum wells, Two-dimensional electron gasses.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 08, 1993
- Accession Number
- ADA272904
Entities
People
- H. H. Winder
Organizations
- University of California, San Diego