IR Materials Producibility
Abstract
This quarter we have focused on completing a paper containing the details of our calculations on the defect concentration in x = 0.2 Hg(l-x)CdxTe. This has involved the refinement of the calculations of all the defects. We have continued to develop our ideas about the formation and annihilation of tellurium precipitates in HgCdTe. We have presented our work on dislocations and the reanalysis of the electronic band structure of narrow-gap HgCdTe at the IRIS materials meeting in August and at the MCT Workshop in October. A paper on the electronic mobility in Hg0.78Cd0.22Te has been submitted for publication in the Journal of Applied Physics. We have completed the calculations of the lithium vacancy and niobium antisite formation energies in LiNbO3, and have begun to incorporate these energies into a thermodynamical analysis. We have continued to refine our calculations on the defect concentrations in ZnSe and have made preliminary predictions of the dominant defects in that system. Native point defect, Defect density, Photonic material, IRFPA, HgTe, CdTe, ZnSe, HgCdTe, LiNbO3, Dislocation, Boltzmann transport equation
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 11, 1993
- Accession Number
- ADA273031
Entities
People
- M. A. Berding
Organizations
- SRI International