Scanning Probe Lithography. 2. Selective Chemical Vapor Deposition of Copper into Scanning Tunneling Microscope-Defined Patterns
Abstract
A scanning tunneling microscope (STM) has been used to define features having critical dimensions ranging from 0.05 to 5.0 micrometer within a self-assembled monolayer resist of octadecylmercaptan, HS(CH2)17CH3, confined to a Au (111) surface. Low temperature chemical vapor deposition (CVD) methods were used to metalize the STM-patterned surface with Cu. At substrate temperatures near 120 deg C, the Cu CVD precursor, hexafluoroacetylacetonatocopper(I)-(1,5- cyclooctadiene), disproportionates to deposit Cu on the STM-etched portion of the substrate, but not on the unetched methyl-terminated monolayer resist surface. At substrate temperatures significantly above 120 deg C the degree of selectivity is reduced, probably as a result of thermal desorption of the organomercaptan monolayer.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 23, 1993
- Accession Number
- ADA273304
Entities
People
- Claudia B. Ross
- Jonathan K. Schoer
- Mark J. Hampden-smith
- Richard M Crooks
- Thomas S. Corbitt
Organizations
- University of New Mexico