LPCVD of InN on GaAs(110) Using HN3 and TMIn: Comparison with Si(100) Results
Abstract
Low-pressure chemical vapor deposition (LPCVD) of InN and laser- assisted LPCVD on GaAs(110) and Si(100) using HN3 and trimethyl indium (TMIn) has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, InN film was built on the GaAs but not on Si surface under the present low-pressure conditions. When the photon beam was introduced, InN films with In:N atomic ratio of 1.0 + or - 0. 1 and a thickness of more than 20 A (the limit of the electron escaping depth for the In3d X-ray photoelectrons) were formed on Si(100) surface. In both cases, the formation of surface nitrides at the initial film growth processes was clearly indicated in the XP spectra. The He(II) UP spectra taken from InN films on GaAs and Si are nearly identical and agree well with the result of a pseudo-potential calculation for the InN valence band. The corresponding SEM pictures showed smooth InN films on GaAs(110), while grains with diameter of approx. 100 nm were observed for InN on Si(100).
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 07, 1993
- Accession Number
- ADA273555
Entities
People
- Lin Ming-chang
- Yuheng Bu
Organizations
- Emory University