Study of the Homogeneity of InP Wafers
Abstract
The homogeneity of InP substrate at both microscope and microscopic scale has been studied by Raman microprobe and photocurrent mapping. Raman microprobe was used for any type of substrate, revealing revealing different structural and electronic properties of different extended defects. This study was correlated with photoetching and a relation between revealed defects and Raman features was established. Semiinsulating substrate were analyzed by photocurrent mapping. Three excitation wave lengths were used, revealing different different sources of non uniformly in these wafers. The technique is shown to be quite sensitive to electrical non homogeneities, concerning the iron distribution across the wafer.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1993
- Accession Number
- ADA273658
Entities
People
- José Luis González
- M. Avella
- Paige Martin
Organizations
- University of Valladolid