The In Situ Observation of Epitaxial Diamond Thin Film Nucleation and Growth Using Emission Electron Microscopy

Abstract

In situ observation of CVD diamond dissolution and etching using photoemission electron microscopy (PEEM) suggests that nucleation of diamond occurs directly on molybdenum (Mo), with a Mo-carbide bulk diffusion barrier that facilitates surface carbon transport for growth. Low energy electron microscopy of doped homoepitaxial C(100) is hindered by surface roughness, which is visible in PEEM. Charging observed with type IIa diamond is no longer present, but the high secondary electron yield is still problematic for direct imaging. TEM studies of CVD diamond grown directly on Mo TEM grids show a 10nm thick amorphous C layer after growth, which is easily removable with an isopropanol rinse. LEED studies of Si(310) substrates for diamond growth show a (2Xl) Si(310) reconstructed surface, with some facetting with fourfold symmetry. Nucleation is sparse and random on the Si(310) surfaces examined to date. CVD diamond, Nucleation, Emission microscopy, In situ electron microscopy, STM, Si(310).

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1993
Accession Number
ADA273698

Entities

People

  • Martin E Kordesch

Organizations

  • Ohio University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Crystals
  • Diamond Films
  • Diffraction
  • Electron Emission
  • Electron Microscopy
  • Electrons
  • Emission
  • Films
  • Materials
  • Microscopy
  • Photoelectric Emission
  • Photoelectrons
  • Spectra
  • Subatomic Particles
  • Surface Roughness
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene