A Physics-Based Heterojunction Bipolar Transistor Model for Integrated Circuit Simulation

Abstract

The purpose of this research effort was to derive a physics-based dc model for a Heterojunction Bipolar Transistor (HBT). The dc model was then linearized to arrive at a small-signal model that accurately predicts the device's electrical behavior at microwave frequencies. This new model offers features not found in previous analytical or physics-based HBT models such as consideration of a cylindrical emitter-base geometry and is direct implementation into SPICE (Simulation Program with Integrated Circuit Emphasis). The device model parameters were determined from a knowledge of the device material, geometry, and fabrication process. The model was then developed by using semiconductor physics to calculate modified parameters for the existing SPICE bipolar junction transistor (BJT) model.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1993
Accession Number
ADA274081

Entities

People

  • James A. Fellows

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Bipolar Junction Transistors
  • Dielectric Permittivity
  • Electronics Laboratories
  • Energy Bands
  • Fabrication
  • Field Effect Transistors
  • Heterojunction Bipolar Transistors
  • Integrated Circuits
  • Materials
  • Power Electronics
  • Semiconductor Devices
  • Semiconductor Physics
  • Semiconductors
  • Solid State Electronics
  • Transistors
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Electronics Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics