Growth, Characterization and Device Development in Monocrystalline Diamond Films
Abstract
Biased enhanced nucleation of diamond on Beta-SiC(100) and Si(100) has been achieved but not on Cu(100). Carbide formation is an apparent attribute to the nucleation. The refractory metals of Hf, Ti, Ta, Ni and W were thus explored as substrates. Diamond nucleation density was found to be directly related to the carbide heat of formation without scratching these substrates. TEM of highly oriented diamond films on Si(100) showed dislocations at low angle boundaries formed from coalesced grains. The azimuthal rotation between grains was between 0-6 deg. Negative electron affinity (NEA) has been found experimentally and theoretically for the 2x1 reconstructed diamond surface. Theoretical results indicate that the observed NEA is associated with a monohydride terminated surface, while the hydrogen-free surface exhibits a positive electron affinity. Raman and various photoluminescence (PL) techniques were used to investigate the role of N doping on the optical centers in CVD diamond films. The PL transitions attributed to the zero-phonon lines of N centers are observed at 1.945 eV and 2.154 eV. A new N center at 1.967 eV and the band A luminescence were also observed. The presence of an in-gap state distribution resulting from the sp2 disordered phase has been established. BN films have been grown on 100 oriented Si, diamond, Cu and Ni substrates via IBAD and characterized via FTIR and HRTEM. The film consisted of the growth sequence of a-, h-, and c-BN and is attributed primarily to increasing compressive intrinsic stress and increased film thickness.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1993
- Accession Number
- ADA274245
Entities
People
- Jeffrey T Glass
- Robert F Davis
- Robert J. Nemanich
Organizations
- North Carolina State University