Pseudomorphic Semiconducting Heterostructures from Combinations of AIN, GaN and Selected SiC Polytypes: Theoretical Advancement and its Coordination with Experimental Studies of Nucleation, Growth, Characterization and Device Development
Abstract
Thin epitaxial films of SiC/AlN multilayers and (AlN)x(SiC)1-x solid solutions have been grown by plasma-assisted, molecular beam epitaxy between 1050-1300 deg C using the gas sources Of Si2H6, C2H4 and N2, the last decomposed using a compact electron cyclotron resonance plasma source, and the solid source of Al. Vicinal alpha(6H)-SiC(0001) was used for the substrates. Electron diffraction and high resolution TEM revealed monocrystalline layers and pseudomorphic growth. Additional studies have shown that (1) the off-axis orientation of the substrate affects the film morphology, (2) surface cleaning is very important and (3) Si/C gas flow ratios may be used to control the SiC polytype. Both Beta(3C)- and alpha(6H)-SiC have been successfully deposited on alpha(6H)-SiC substrates. The chemical interdiffusion between monocrystalline AlN films and alpha(6H)-SiC wafers is also under study. The results of the successful research regarding multilayer heterostructures in the AlN/GaN system are now being used to guide the fabrication of a double heterostructure ultra- violet light emitting diode based on suitably doped AlGaN confinement layers with improved carrier confinement and mobility.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1993
- Accession Number
- ADA274247
Entities
People
- K. Linthicum
- Robert F Davis
- S. Kern
- S. Roberson
- Shuta Tanaka
Organizations
- North Carolina State University