Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and their Characterization
Abstract
Atomic layer epitaxy of monocrystalline Beta-SiC on Si(100) and alpha (6H)-SiC(0001) substrates has been accomplished at 850 deg C by alternating the supplies of Si2H6, C2H4 and atomic hydrogen and without the use of a carbonizing step. Conformal deposition of SiC has been demonstrated within trenches etched into Si(100) wafers. P-type films have also been achieved using A1 as a dopant. Devices including HBTs with Beta-SiC emitters have been designed. Hydrogen plasma cleaning of SiC surfaces has been studied. XPS has shown that this process effectively removes C-0, C-F and C-H bonding at the surface. Temperature programmed desorption has been used to look at the amount of subsurface hydrogen generated during plasma cleaning. The diamond precursors of chlorinated methylsilanes and the substrate of Si(100) were subjected to bias enhanced high- frequency CVD. No difference in diamond nucleation density between the precursors was observed. An interface structure of single crystal CeO2/Si(111) grown by laser ablation has been investigated. An interfacial reaction occurred between these phases during deposition which resulted in the formation of an oxygen deficient amorphous(a) CeOx layer and an SiO2 layer. Post annealing in 02 caused the disappearance of the a-CeOx and the regrowth of crystalline CeO2. Atomic Layer Epitaxy (ALE), Diamond, Silicon carbide, CeO2, Conformal position, XPS, Temperature programmed desorption, Chlorinated methylsilanes, Interfacial reaction.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1993
- Accession Number
- ADA274325
Entities
People
- Jeffrey T Glass
- Nadina El-masry
- Robert F Davis
- Salah Bedair
Organizations
- North Carolina State University