Interface Properties of Wide Bandgap Semiconductor Structures
Abstract
Ab initio molecular dynamics calculations have shown that the lxl:2H and the 2xl:H surfaces of diamond(C)(100) have a (-) electron affinity(EA); the clean (100) surface has a (+) EA. This is in agreement with experiment. Biased nucleation of C on Beta-SiC(100) and Si(100) has been achieved but not on Cu(100). C nucleation densities on Hf, Ti, Ta, Ni and W were directly related to the carbide heat of formation. The precursors of chlorinated methylsilanes coupled with bias were used to deposit C films on Si(100). Textured C(II) films were also achieved using an oxyacetylene torch. Cu forms an epitaxial rectifying contact to diamond with a Schottky barrier height (SBH) of approx. 1 leV. Hydrogen plasma was used to remove hydrocarbons from SiC surface at 400 deg C. Controlled growth of single crystal Beta(3C)-and alpha(6H)-SiC films has been achieved on alpha(6H)-SiC wafers at 1050 deg C by gas source(GS) MBE. The growth mode of each polytype has been investigated. Rectifying Ti contacts with low ideality factors (n<1.09) and leakage currents (5xlO(exp-7) A/cM2 at IOV) and SBHs of 0.79-0.88 have been achieved. The three-dimensional nucleation and coalescence of islands of A1N on alpha(6H)-SiC has been discerned via TEM. Multilayers and solid solutions of A1N and SiC have been achieved and characterized.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1993
- Accession Number
- ADA274356
Entities
People
- Jeffrey T Glass
- Jerry Bernholc
- Robert F Davis
- Robert J. Nemanich
- Salah Bedair
Organizations
- North Carolina State University