The Growth and Characterization of GaN as a Photodetector
Abstract
A unique apparatus incorporating four independent supersonic jets and a substrate transfer mechanism for the growth of thin films in an ultrahigh vacuum chamber is under construction. The four jets are the continuous flow type and can be turned on and off with computer control, allowing precise control of the reactants for atomic layer epitaxy. The supersonic jet configuration prepares the reactants with high translational energies to overcome activation barriers, enhances the impinging flux, and reduces the growth temperature and by about six orders of magnitude the growth pressure. Growth of high quality films is expected. Thin films of gallium nitride (GaN) will be grown on Si(100) using triethylgallium and ammonia as the precursors. Photodetector of GaN will be fabricated at the Cornell National Nanofabrication Facility. Second harmonic generation and atomic force microscopy measurements have been performed on GaN films on sapphire grown by Asif Khan of APA Optics. A new experiment measuring the thin film interference and band gap absorption of GaN film on sapphire has been set up in the Advanced Laboratory at Cornell University. Jet, Beam, Gallium nitride, Photodetector, Silicon, Atomic layer epitaxy, High flux, Activation energy.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 21, 1993
- Accession Number
- ADA274570
Entities
People
- Wilson Ho
Organizations
- Cornell University Department of Physics