Demonstration of Monolithic Co-Fabrication of Y1Ba2Cu3O7-Sigma and CMOS Devices on the Same Sapphire Substrate
Abstract
This paper reports the first fabrication of active semiconductor and high temperature superconducting (HTS) devices on the same substrate. Complementary Metal-Oxide-Semiconductor (CMOS) transistors were fabricated on the same sapphire substrate as either YBCO flux-flow transistors (FFTs) or YBCO superconducting quantum interference devices (SQUIDs). All devices functioned as expected at 77 K without degradation, demonstrating that a compatible process has been found to monolithically integrate adjacent CMOS and HTS devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1993
- Accession Number
- ADA274757
Entities
People
- M. J. Burns
- P. R. De La Houssaye
- S. D. Russell
- S. R. Clayton
- W. S. Ruby
Organizations
- Naval Command, Control and Ocean Surveillance Center