Investigation of a Normal Incidence High-Performance P-Type Strained Layer In0.3Ga0.7As/In0.52Al0.48As Quantum Well Infrared Photodetector

Abstract

During this reporting period, we have made significant strides towards the program goals. A major breakthrough was made in the development of a new strained layer p-type InGaAs/InAlAs QWIP grown on InP by MBE. This new QWIP achieved an ultra-low dark current and a very high detectivity at 8.1 micrometers and 77 K. This detector is under background limited performance (BLIP) at temperatures up to 100 K, which is the highest BLIP temperature reported for a QWIP. A dark current density of 7xlO(exp -8)A/sq cm and a BLIP detectivity of 5.9xl0(exp 10) Jones were measured for this QWIP at 77 K. Currently, we are investigating other possible p-type QWIP structures with different performance parameters. These include the design and fabrication of a GaAs/InGaAs p-type QWIP grown on GaAs via MBE and a new dual strained InGaAs/ InAlAs p-type QWIP. Additional consideration is being given towards the reliability of p-type contacts for these QWIP structures.

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Document Details

Document Type
Technical Report
Publication Date
Jan 15, 1994
Accession Number
ADA274854

Entities

People

  • Jerome T. Chu
  • Shengsan Li

Organizations

  • University of Florida

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Band Structures
  • Compound Semiconductors
  • Crystal Lattices
  • Detection
  • Detectors
  • Electrons
  • Energy Bands
  • Energy Levels
  • Fabrication
  • Ground State
  • Materials
  • Quantum Efficiency
  • Quantum Wells
  • Radiation
  • Semiconductors
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing