Preparation, Characterization, and Facile Thermolysis of (X2GaP(SiMe3)2)2 (X = Br, I) and (Cl3Ga2P)n; New Precursors to Nanocrystalline Gallium Phosphide
Abstract
Br2GaP(SiMe3)2,2 and (I2GaP(SiMe3)2,2 have been prepared by the 1:1 mole ratio reaction of the corresponding gallium(III) halide with (Me3Si)3P. Direct introduction probe mass spectrometry indicates that the former product is dimeric in the gas phase; single-crystal X-ray analysis reveals that it is also dimeric in the solid state and it is isostructural with Cl2GaP(SiMe3)2,2, but the crystals are not isomorphous. Br2GaP(SiMe3)2,2 crystallizes in the orthorhombic system, space group Pbca, with a = 13.803(2), b = 16.652(2), c = 13.636(2) A, V = 3134(1) A(3), D calc = 1.725 g cm- 3 for Z = 4; the mean Ga-P bond length in the planar Ga-P-Ga-P core is 2.386 A. Also described is the synthesis Of (Cl3Ga2P)n via the 2:1 mole ratio reaction of GaCI3 and (Me3Si)3P. All of the title compounds undergo thermolysis at relatively low temperature to yield nanocrystalline GaP. Thermolysis has been studied by thermal gravimetric analysis, and the resultant air-stable powders have been characterized by X-ray diffraction and elemental analysis. synthesis, crystal structure, four-membered ring, gallium phosphide, precursor, nanocrystals.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 18, 1994
- Accession Number
- ADA275019
Entities
People
- Andrew T. McPhail
- James R. Bowser
- Julia A. Giambra
- Richard L. Wells
- Steven R. Aubuchon
Organizations
- Duke University