InTISb for Long-Wavelength Infrared Photodetectors and Arrays

Abstract

The objective of this research program is grow InTISb alloys by low- pressure metalorganic chemical vapor deposition and to investigate their physical properties, in order to demonstrate the feasibility of long-wavelength infrared detectors based on these materials. Ab theoretical calculations indicate that InTISb is a potential alternative to HgCdTe, with the added metallurgical and processing advantages offered by III-V technology. TISb has predicted to be a semimetal with a bandgap of -1.5e V. Therefore, it should be possible to cover the whole infrared spectrum by allowing InSb with TISb. In addition, TISb is expected to remain lattice-matched to InSb within 2%, which is an advantage for the growth of device-quality InTISb alloys. Even though TISb was expected to favor the Cs-CI-type structure, InTISb alloy was estimated to exhibit a stable zinc-blende structure up to 15-20% TI.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1993
Accession Number
ADA275079

Entities

People

  • Manijeh Razeghi

Organizations

  • Northwestern University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Chemical Vapor Deposition
  • Detection
  • Detectors
  • Diffraction
  • Electrical Properties
  • Infrared Detection
  • Long Wavelengths
  • Materials
  • Measurement
  • Optical Properties
  • Physical Properties
  • Quantum Efficiency
  • Scattering
  • Spectra
  • Vapor Deposition
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Quantum Chemistry
  • Semiconductor Device Technology