The Effects of Molecular Orientation Geometry and Surface Anisotropy Upon Etching
Abstract
Sticking probabilities have been measured for molecular chlorine upon the GaAs (100) Ga-rich c(8x2), GaAs(100) As-rich C(2.8) and GaAs(110) stoichiometric (1x1) surfaces. The sticking probability has measured as a function of incident translational energy (0.038 to 0.66 eV), surface temperature (150 K - 835 K), angle of incidence (0 deg to 37 deg), and surface chlorine coverage. Our data indicate the presence of both precursor and direct activated chemisorption mechanisms on all three surfaces. Total energy scaling is observed on both the GaAs(100) Ga-rich c(8x2) surface and the stoichiometric (1x1) surface for both precursor mediated and direct activated chemisorption, indicating a highly corrugated gas-surface interaction potential.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1993
- Accession Number
- ADA275154
Entities
People
- Andrew C Kummel
Organizations
- University of California, Santa Barbara