Modeling the Total Dose Radiation Effects of Hg(1-x)Cd(x)Te Photodiodes Using Numerical Device Simulators

Abstract

We fabricated high quality MCT diodes using in-situ grown MCT and selective annealing. We used these diodes to benchmark our initial characterization and as a basis for our irradiation modeling. We implemented the models in PISCES-IIB and compared the I-V relationship to measurements. The close match between simulations and measurements demonstrates the applicability of the models. We expanded the simulations to I-V characteristics of irradiated diodes. To do so, we developed models for the induced current mechanisms resulting from radiation interactions. The results confirm the theories concerning the radiation's effect on tunneling in MCT. The simulations also suggest that improvements require knowledge of tunneling currents associated with trap formation in MCT. Radiation effects, MCT, Mercury cadmium telluride, Infrared detectors, Device simulations, Photodiodes.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1994
Accession Number
ADA275235

Entities

People

  • Iswara Bhat
  • James C. Petrosky
  • James W. Howard
  • Robert C. Block

Organizations

  • Rensselaer Polytechnic Institute

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Ground and Sea Platforms
  • Space

DTIC Thesaurus Topics

  • Band Gaps
  • Charge Carriers
  • Crystal Lattices
  • Detectors
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Fermi Levels
  • Infrared Detectors
  • Ionizing Radiation
  • Measurement
  • Military Research
  • P-N Junctions
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductors
  • Simulators

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy